PART |
Description |
Maker |
STL8NH3LL |
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLATULTRA LOW GATE CHARGE STripFETMOSFET N沟道30 0.012з - 8甲的PowerFLAT⑩超低栅极电荷STripFET⑩MOSFET N-CHANNEL 30 V - 0.012 з - 8 A PowerFLAT⑩ ULTRA LOW GATE CHARGE STripFET⑩ MOSFET N-CHANNEL MOSFET N-CHANNEL 30 V - 0.012 ?- 8 A PowerFLAT ULTRA LOW GATE CHARGE STripFET MOSFET
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
SPN02N60C3 SPN02N60C305 |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
|
Infineon Technologies AG
|
STL75NH3LL |
N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET N-channel 30 V, 0.004 ヘ, 20 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
STD95NH02L-1 STD95NH02L |
N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET Power MOSFET N-channel 24V - 0.0039ヘ - 80A - DPAK - IPAK Ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
STW23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
STF23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
STF9N80K5 |
Ultra-low gate charge
|
STMicroelectronics
|
IXKH35N60C5 |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
|
IXYS Corporation
|
SPA07N60C3 SPI07N60C3 SPP07N60C3 SPP07N60C307 |
New revolutionary high voltage technology Ultra low gate charge
|
Infineon Technologies AG
|
SPI07N65C3 SPA07N65C3 SPP07N65C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
STL20NM20N |
N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET
|
STMicroelectronics
|